Arsenic δ-doped HgTe∕HgCdTe superlattices grown by molecular beam epitaxy
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چکیده
منابع مشابه
Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions
GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions have been systematically investigated by transmission electron microscopy. It is revealed that periodic arrays of GeMn nanodots can be formed on Ge and GaAs substrates at low temperature (approximately 70°C) due to the matched lattice constants of Ge (5.656 Å) and GaAs (5.653 Å), while a periodic ...
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We report the successful growth oflnAs/Ga 1 _ x Inx Sb strained-layer superlattices by molecularbeam epitaxy. The superlattices are grown on thick, strain-relaxed InAs or GaSb buffer layers on ( 100)-oriented GaAs substrates. A short-period, heavily strained superlattice at the GaAs interface is found to improve the structural quality of the buffer layer. Arsenic incorporation in nominally pure...
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Si/Si0.97C0.03 superlattices grown on Si~001! substrates by Sb surfactant assisted molecular beam epitaxy are characterized by in situ reflection high energy electron diffraction ~RHEED!, atomic force microscopy, transmission electron microscopy ~TEM!, and high resolution x-ray diffraction. The RHEED shows that, in the absence of Sb, the growth front roughens during Si0.97C0.03 growth and smoot...
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Scanning thermal microscopy has been implemented in a cross-sectional geometry, and its application for quantitative, nanoscale analysis of thermal conductivity is demonstrated in studies of an ErAs/GaAs nanocomposite superlattice. Spurious measurement effects, attributable to local thermal transport through air, were observed near large step edges, but could be eliminated by thermocompression ...
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Same as Report (SAR) 18. NUMBER
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2008
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2888967